| PART |
Description |
Maker |
| SFT10000_3 SFT10000-3 |
20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR
|
SSDI[Solid States Devices, Inc]
|
| RFB300-24S12-5TY RFB300-48S28-4TY RFB300-48S28-R5Y |
DC-DC CONVERTERS 300-350 W Half-Brick
|
ARTESYN[Artesyn Technologies]
|
| MJE5730 MJE5731 MJE5731A |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
|
Motorola, Inc
|
| PETP1016 |
Low PIM 30 dB 4.1/9.5 Mini DIN Unequal Tapper From 350 MHz to 5.85 GHz Rated to 300 Watts
|
Pasternack Enterprises,...
|
| 2N6517BU 2N6517BUNL |
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| MMBTA42LT1 |
300 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Rectron Semiconductor
|
| IRFP350 FN2319 |
From old datasheet system
16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| 2N6308.MODR1 2N6308 |
Bipolar NPN Device in a Hermetically sealed TO3
8 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
Seme LAB
SEMELAB LTD
|
| PZTA44 PZTA44_4 PZTA44115 |
NPN high-voltage transistor - fT min: 20 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 1350 mW; VCEO max: 400 V; Package: SOT223 (SC-73); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
